Title :
Voltage gain enhancement by conductance cancellation in GaAs MESFET opamps
Author :
Xiao, Shuo ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
GaAs MESFET analog circuits have relatively low gain. To enhance the gain, positive feedback can be used to allow output conductance cancellation between the drive and active load transistors. This decreases the effective output conductance and increases the voltage gain of the amplifying stage without the need for cascode stages. A GaAs MESFET operational amplifier using this scheme, implemented in a 1-μm non-self-aligned GaAs technology, achieves a DC gain of 60 dB and a bandwidth of 840 MHz
Keywords :
III-V semiconductors; MESFET integrated circuits; circuit feedback; feedback amplifiers; field effect analogue integrated circuits; gallium arsenide; operational amplifiers; wideband amplifiers; 1 micron; 60 dB; 840 MHz; GaAs; MESFET analog circuits; MESFET opamps; conductance cancellation; non-self-aligned GaAs technology; op amp; operational amplifier; output conductance; positive feedback; voltage gain enhancement; Driver circuits; Equations; FETs; Gallium arsenide; Impedance; Insulation; Integrated circuit technology; MESFETs; Output feedback; Voltage;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.393920
