Title :
A new method based on charge pumping technique to extract the lateral profiles of localized charge trapping in nitride
Author :
Pang, Huiqing ; Pan, Liyang ; Sun, Lei ; Zeng, Ying ; Zhang, Zhaojian ; Zhu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A method based on charge pumping technique is proposed and adopted to extract the lateral profiles of localized trapped charges in a channel hot electron injection programmed nitride storage memory cell. With the method, two peaks of the injected charges with about 50nm width are firstly observed and distinguished. The device simulation results also show good consistency with the measured curves.
Keywords :
charge injection; electron traps; hot carriers; semiconductor device reliability; semiconductor storage; channel hot electron injection; charge distribution; charge pumping; charge trapping memory; device simulation; lateral profiles; localized charge trapping; nitride storage memory cell; Channel hot electron injection; Charge measurement; Charge pumps; Current measurement; Electron traps; Microelectronics; Pulse measurements; Sun; Testing; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546622
