• DocumentCode
    2607800
  • Title

    Comparison and Analysis on Very Fast Transient Overvoltage Based on 550kV GIS and 800kV GIS

  • Author

    Chi, Tian ; Xin, Lin ; Jianyuan, Xu ; Zhen-xin, Geng

  • Author_Institution
    Sch. of Electr. Eng., Shenyang Univ. of Technol., Shenyang, China
  • fYear
    2008
  • fDate
    9-12 Nov. 2008
  • Firstpage
    288
  • Lastpage
    291
  • Abstract
    The transitional process from EHV to UHV not only brings many technical problems, such as zero drift, resonance overvoltage, quenching of secondary arc current, but also makes the problem of VFTO in GIS caused by operating disconnector increasingly outstanding. With the development of UHV GIS in China, there still exist many works to be done thoroughly for the further study of VFTO characteristics. In this paper, a mathematical model has been set up respectively based on a 500 kV GIS and an 800 kV GIS to study the amplitude-frequency of VFTO and its effects on power transformers, using FORTRAN and EMTP. The protective effect of shunt resistor of DS has been verified again in suppression of VFTO in 800 kV GIS. By comparing and analyzing the calculation results between the two EHV systems, an important reference is provided to accelerate the UHV transmission network for the localization of UHV utilities and GIS manufacture.
  • Keywords
    gas insulated substations; gas insulated switchgear; high-voltage engineering; overvoltage protection; power transformers; transients; transmission networks; China; EMTP; FORTRAN; UHV GIS; UHV transmission network; VFTO suppression; arc current quenching; gas insulated substations; gas insulated switchgear; power transformers; shunt resistor protective effect; very fast transient over voltage; voltage 550 kV; voltage 800 kV; Acceleration; EMTP; Geographic Information Systems; Mathematical model; Power system protection; Power transformers; Resistors; Resonance; Transient analysis; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application, 2008. ICHVE 2008. International Conference on
  • Conference_Location
    Chongqing
  • Print_ISBN
    978-1-4244-3823-5
  • Electronic_ISBN
    978-1-4244-2810-6
  • Type

    conf

  • DOI
    10.1109/ICHVE.2008.4773930
  • Filename
    4773930