DocumentCode :
2607803
Title :
Determination of recombination parameters in semiconductors from photoconductance measurements
Author :
Cuevas, Andres ; Sinton, Ronald A. ; Stuckings, Michael
Author_Institution :
Fac. of Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
1996
fDate :
8-11 Dec 1996
Firstpage :
16
Lastpage :
19
Abstract :
The possibility of obtaining minority carrier lifetimes and emitter recombination currents from quasi-steady photoconductance measurements of the effective minority carrier lifetime is demonstrated both theoretical and experimentally
Keywords :
carrier lifetime; electron-hole recombination; minority carriers; photoconductivity; semiconductors; emitter recombination current; minority carrier lifetime; photoconductance measurement; semiconductor; Charge carrier density; Charge carrier lifetime; Charge carrier processes; Current measurement; Density measurement; Photoconducting devices; Photoconducting materials; Photoconductivity; Radiative recombination; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
Type :
conf
DOI :
10.1109/COMMAD.1996.610047
Filename :
610047
Link To Document :
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