New method for comprehensive characterisation of MES/MOD/MOS FET´s

Author

Parker, Anthony E. ; Scott, Jonathan B.

Author_Institution

Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia

fYear

1993

fDate

3-6 May 1993

Firstpage

1093

Abstract

A measurement technique for performing detailed characterisation of modern field effect transistors (FETs) is reported. The technique, based on impulse excitation over arbitrary voltage and time contours, allows determination of parameters and time constants associated with second-order effects observed in short-channel FETs and IIV-V semiconductors. Large-signal bias-independent models that incorporate these additional parameters provide predictions that are consistent with large-signal measurements and conventional s-parameter results

Keywords

MOSFET; Schottky gate field effect transistors; automatic testing; high electron mobility transistors; semiconductor device testing; HEMT; IIV-V semiconductors; MESFET; MODFET; MOSFET large-signal bias-independent models; characterisation; field effect transistors; impulse excitation; measurement technique; second-order effects; short-channel FETs; time constants; FETs; Instruments; Measurement techniques; Predictive models; Probes; Pulse measurements; SPICE; Scattering parameters; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-1281-3

Type

conf

DOI

10.1109/ISCAS.1993.393925

Filename

393925