Title :
C60 nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C60 nanowhiskers
Author :
Ochiai, Yuichi ; Ogawa, Ken-ichi ; Aoki, Nobuyuki ; Bird, Jonathan P.
Author_Institution :
Dept. of Electron. & Mech. Eng., Chiba Univ., Chiba
Abstract :
A pure and solvate C60 nanowhisker (NW) has been synthesized in N2 environment so as to study the C60-NW-based field effect transistor (FET) characteristics using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. The FET has been worked even at the solvate condition, and shows the highest on/off ratio in the various conditions. The crystalline structure changes from a highlyoriented hexagonal structure to a disordered face centered cubic structure after evaporating the solvent with an introduction of high-density dislocations and gate-independent carriers in C60 NWs. It is found that the solvate C60-NW FET shows a clear improvement of on/off ratio, however we need an appropriate solvent in order to improve the mobility.
Keywords :
X-ray diffraction; atomic force microscopy; carbon; crystal structure; dislocations; field effect transistors; nanostructured materials; scanning electron microscopy; C60; X-ray diffraction; atomic-force microscopy; crystalline structure; disordered face centered cubic structure; field-effect-transistor; gate-independent carriers; high-density dislocations; highly-oriented hexagonal structure; nanowhiskers; scanning electron microscopy; Annealing; Crystalline materials; Crystallization; Electrodes; FCC; FETs; Powders; Scanning electron microscopy; Solvents; X-ray diffraction; C60; LLIP; field effect transistor; nanowhisker; solvate;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601393
