Title :
High performance ZnO nanowire field effect transistor
Author :
Cha, S.N. ; Jang, J.E. ; Choi, Y. ; Ho, G.W. ; Kang, D.-J. ; Hasko, D.G. ; Welland, M.E. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nanoscale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 μS, a mobility of 450 cm2/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 106.
Keywords :
II-VI semiconductors; high electron mobility transistors; nanoelectronics; nanowires; zinc compounds; ZnO; electron mobility; nanowire field effect transistor; self-aligned gate electrodes; Chemicals; Dielectrics and electrical insulation; Electrodes; FETs; Fabrication; MOSFETs; Niobium; Semiconductivity; Semiconductor materials; Zinc oxide;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546624
