Efficient crosstalk reduction using very low resistivity SOI substrate

Significant reduction of the crosstalk for SOI substrates has been obtained through the use of very low resistivity substrate. Based on modeling, the effect of substrate doping and the buried oxide capacitance on SOI substrate crosstalk was investigated. To verify the modeling results 3D simulation and finally manufacturing and measurement of crosstalk on the test structures were made. Measurements, 3D simulation and modeling corresponds well and shows an improvement in the range of 20-40 dB for very low resistivity SOI substrates compared to high resistivity SOI substrates.