• DocumentCode
    2607905
  • Title

    A new nonlinear DC and temperature GaAs MESFET model

  • Author

    Rodriguez-Tellez, J. ; Stothard, B P

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Bradford Univ., UK
  • fYear
    1993
  • fDate
    3-6 May 1993
  • Firstpage
    1112
  • Abstract
    A new DC nonlinear GaAs MESFET device model is presented. It offers improved accuracy over existing models by simulating the bias dependency of the device transconductance (β) and pinch-off point (VTO) parameters. The effect of these bias dependencies becomes more important as a departure from room temperature is made. New expressions for simulating the temperature dependency of VTO and β are presented. These provide improved accuracy over existing techniques. The new model effectively couples together the bias and temperature dependency of the device
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; thermal analysis; GaAs; MESFET device model; bias dependency; device transconductance; nonlinear DC model; temperature dependency; temperature model; Analytical models; Circuit noise; Circuit simulation; Coupling circuits; Diodes; Gallium arsenide; MESFETs; Temperature dependence; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    0-7803-1281-3
  • Type

    conf

  • DOI
    10.1109/ISCAS.1993.393930
  • Filename
    393930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607905