Title :
Model for MOS Field-Time-Dependent Breakdown
Author :
Li, S.P. ; Prussin, S. ; Maserjian, J.
Author_Institution :
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103
Abstract :
A quantitative model for MOS breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process.
Keywords :
Electric breakdown; Ion emission; Laboratories; Oxidation; Propulsion; Silicon; Statistics; Surface cleaning; Surface contamination; Testing;
Conference_Titel :
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1978.362836
