DocumentCode
2607939
Title
Model for MOS Field-Time-Dependent Breakdown
Author
Li, S.P. ; Prussin, S. ; Maserjian, J.
Author_Institution
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103
fYear
1978
fDate
28581
Firstpage
132
Lastpage
136
Abstract
A quantitative model for MOS breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process.
Keywords
Electric breakdown; Ion emission; Laboratories; Oxidation; Propulsion; Silicon; Statistics; Surface cleaning; Surface contamination; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1978.362836
Filename
4208226
Link To Document