• DocumentCode
    2608001
  • Title

    Electrostatic Damage Susceptibility of Semiconductor Devices

  • Author

    Schreier, L.A.

  • Author_Institution
    Technology Support Division, Hughes Aircraft Company, Culver City, CA 90230
  • fYear
    1978
  • fDate
    28581
  • Firstpage
    151
  • Lastpage
    153
  • Abstract
    Various semiconductor devices were tested for susceptibility to electrostatic discharge (ESD). A circuit similar to the ESD test circuit described in Military Specification MIL-M-38510 slash sheets was used for testing. Devices were also subjected to ESD levels equivalent to 75 percent of the device ESD degradation threshold and then burned-in to see if low-level ESD affects device reliability in system use. A ranking of devices in terms of ESD susceptibility and failure rate during burn-in is provided.
  • Keywords
    Aircraft; Circuit testing; Electrostatic discharge; FETs; Manufacturing; Power supplies; Schottky diodes; Semiconductor devices; Semiconductor diodes; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1978. 16th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1978.362840
  • Filename
    4208230