DocumentCode
2608001
Title
Electrostatic Damage Susceptibility of Semiconductor Devices
Author
Schreier, L.A.
Author_Institution
Technology Support Division, Hughes Aircraft Company, Culver City, CA 90230
fYear
1978
fDate
28581
Firstpage
151
Lastpage
153
Abstract
Various semiconductor devices were tested for susceptibility to electrostatic discharge (ESD). A circuit similar to the ESD test circuit described in Military Specification MIL-M-38510 slash sheets was used for testing. Devices were also subjected to ESD levels equivalent to 75 percent of the device ESD degradation threshold and then burned-in to see if low-level ESD affects device reliability in system use. A ranking of devices in terms of ESD susceptibility and failure rate during burn-in is provided.
Keywords
Aircraft; Circuit testing; Electrostatic discharge; FETs; Manufacturing; Power supplies; Schottky diodes; Semiconductor devices; Semiconductor diodes; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1978.362840
Filename
4208230
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