Title :
High-speed InP-based resonant tunneling diode on silicon substrate
Author :
Prost, W. ; Khorenko, V. ; Mofor, A.-C. ; Bakin, A. ; Khorenko, E. ; Ehrich, S. ; Wehmann, H.-H. ; Schlachetzki, A. ; Tegude, F.J.
Author_Institution :
Dept. of Solid-State Electron., Duisburg-Essen Univ., Duisburg, Germany
Abstract :
A technology for high speed and high performance III-V semiconductor devices on silicon substrate has been developed. It consists of an InP-on-Si quasi-substrate exhibiting an XRD FWHM as low as 86 arcsec, followed by a low-temperature (370°C) grown InAlAs layer. The surface roughness is reduced to 1.9 nm along with an almost complete elimination of surface defects. The applicability is experimentally verified for InP-based resonant tunneling diodes exhibiting a speed index of 32 ps/V indicating a potentially low-cost technology for high functionality circuits operating above 10 Gb/s.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; high-speed techniques; indium compounds; resonant tunnelling diodes; silicon; substrates; surface roughness; 370 C; III-V semiconductor devices; InP-Si-InAlAs; high functionality circuits; high speed resonant tunneling diodes; low-cost technology; semiconductor quasi-substrate; silicon substrates; surface defect elimination; surface roughness; III-V semiconductor materials; Indium compounds; Resonant tunneling devices; Rough surfaces; Semiconductor devices; Semiconductor diodes; Silicon; Substrates; Surface roughness; X-ray scattering;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546634
