Title :
2.4 GHz medium power amplifier for wireless LAN applications using GaAs PHEMT
Author :
Rasmi, Amiza ; Rose, M. Rafie Che ; Rahim, Ahmad Ismat Abdul ; Marzuki, Arjuna
Author_Institution :
TM Innovation Centre, TM R&D Sdn Bhd, Cyberjaya, Malaysia
Abstract :
A 2.4GHz medium power amplifier (MPA) using 0.15μm GaAs PHEMT technology for wireless local area network (LAN) applications is demonstrated. At 3.0 V of drain voltage (VDS), a fabricated MPA exhibits the output power at 1dB gain compression (P1dB) of 15.20 dBm, power-added efficiency (PAE) of 12.70% and gain of 9.70 dB, respectively. The maximum current, Imax of this amplifier is 84.40mA and the power consumption for the device is 253.20mW.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium arsenide; low-power electronics; power HEMT; wireless LAN; GaAs; PHEMT; current 84.40 mA; drain voltage; frequency 2.4 GHz; local area network; medium power amplifier; noise figure 9.70 dB; power 253.20 mW; power consumption; power-added efficiency; size 0.15 mum; voltage 3 V; wireless LAN applications; CMOS integrated circuits; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation; 2.4 GHz; GaAs PHEMT; medium power amplifier; wireless LAN applications;
Conference_Titel :
Applied Electromagnetics (APACE), 2010 IEEE Asia-Pacific Conference on
Conference_Location :
Port Dickson
Print_ISBN :
978-1-4244-8565-9
DOI :
10.1109/APACE.2010.5720108
