Title :
Design considerations for a highly linear electronically tunable resistor
Author :
Vavelidis, K. ; Tsividis, Y.
Author_Institution :
Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
Abstract :
Design considerations are presented for a linear, electronically tunable resistor. A MOSFET is converted into a highly linear resistor by the application of voltages in such a way that the gate-channel and body-channel potentials remain constant all along the channel, as well as independent of signals
Keywords :
MOSFET; resistors; MOSFET; body-channel potentials; electronically tunable resistor; gate-channel potentials; highly linear resistor; Application software; Batteries; Computer science; Distortion; MOSFET circuits; Resistors; Threshold voltage; Tunable circuits and devices; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.393938
