Title :
Characterization and modeling of Al2O3 MIM capacitors: temperature and electrical field effects
Author :
Bécu, S. ; Crémer, S. ; Noblanc, O. ; Autran, J.-L. ; Delpech, P.
Abstract :
This paper deals with the capacitance response of metal-insulator-metal (MIM) structures with 15 nm thick Al2O3 as dielectric. Electrical characterizations between 100 K and 450 K have been performed to study the temperature effect on the capacitance. An original model assuming that the permanent moment of the polar molecules in the Al2O3 film grows linearly with temperature is exposed to explain the experimental results.
Keywords :
MIM devices; aluminium compounds; capacitors; dielectric materials; electric field effects; semiconductor device models; 100 to 450 K; 15 nm; Al2O3; MIM capacitors; capacitance response; electrical characterization; electrical field effects; metal-insulator-metal structures; permanent moment; polar molecules; temperature effects; Capacitance; Capacitance-voltage characteristics; Dielectric materials; MIM capacitors; Microelectronics; Passive filters; Radio frequency; Semiconductor device modeling; Temperature dependence; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546636
