Precise analogue characterization of MIM capacitors using an improved charge-based capacitance measurement (CBCM) technique

Author

Ning, Zhenqiu ; Delecourt, Henri-Xavier ; De Schepper, Luc ; Gillon, Renaud ; Tack, Marnix

Author_Institution

AMI Semicond. Belgium, Oudenaarde, Belgium

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

269

Lastpage

272

Abstract

The MIM capacitor is a key building block for mixed signal design. To perform an accurate analogue characterization of the MIM capacitor, a precise technique based on an improved CBCM is proposed. A test structure containing the pass-gate implementation of the CBCM structures and the leakage current suppression circuits has been designed, fabricated and tested in AMIS 0.35 mm process. The technique has been proven to be accurate, robust and easy to use for the analogue characterization of the MIM capacitors.

Keywords

MIM devices; capacitors; leakage currents; semiconductor device measurement; semiconductor device models; semiconductor device testing; 0.35 mm; MIM capacitors; analogue characterization; charge-based capacitance measurement; leakage current suppression; mixed signal design; pass-gate implementation; Ambient intelligence; Capacitance measurement; Circuit testing; Dielectric measurements; Inverters; Linearity; MIM capacitors; Parasitic capacitance; Signal design; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546637

Filename

1546637