DocumentCode :
2608116
Title :
Distinction of intrinsic and extrinsic breakdown failure modes of Cu/low-k interconnects
Author :
Hwang, Nam ; Tan, Tam Lyn ; Gan, Chee Lip
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
273
Lastpage :
276
Abstract :
Three distinct leakage current profiles in a Cu/low-k interconnect systems were observed from breakdown voltage characterization. Consequently, extrinsic and intrinsic failure modes are able to be distinguishable based on the I-V profile showing the different temperature dependence and statistical distribution. Normal distribution statistical analysis further attested the different failure mechanisms obtained, and the physical failure analysis was performed to show the breakdown failure mechanism of Cu/low-k interconnect systems.
Keywords :
copper; electric breakdown; failure analysis; integrated circuit interconnections; leakage currents; low-k dielectric thin films; statistical analysis; statistical distributions; Cu; breakdown failure mechanism; breakdown voltage characterization; extrinsic breakdown failure mode; failure analysis; intrinsic breakdown failure mode; leakage currents; low-k interconnects; statistical distribution; Breakdown voltage; Copper; Dielectrics; Electric breakdown; Failure analysis; Leakage current; Materials science and technology; Silicon carbide; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546638
Filename :
1546638
Link To Document :
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