Title :
The application of OIM and EBIC techniques to the characterization of polycrystalline silicon films
Author :
Chou, C.T. ; Huang, Y. ; Shi, Z.
Author_Institution :
Pacific Solar Pty. Ltd., Sydney, NSW, Australia
Abstract :
The orientation imaging microscopy (OIM) has been routinely used to characterize pc-Si thin film materials for photovoltaic applications. This technique has also been used jointly with electron beam induced current (EBIC) technique to study the relations of grain boundary structure and their recombination strengths. In this paper the technique is described and examples have been given. Evidence has been presented that the Σ3 grain boundaries can be strong recombination centres depending on the grain boundary planes. Existing results in the literature need to be re-examined
Keywords :
EBIC; electron-hole recombination; elemental semiconductors; grain boundaries; scanning electron microscopy; semiconductor thin films; silicon; solar cells; EBIC; OIM; Si; electron beam induced current; grain boundary recombination; orientation imaging microscopy; photovoltaic material; polycrystalline silicon thin film; Electron beams; Grain boundaries; Grain size; Pixel; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Silicon; Spontaneous emission; X-ray diffraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610049
