Title :
In-depth study of strained SGOI nMOSFETs down to 30nm gate length
Author :
Andrieu, F. ; Ernst, T. ; Faynot, O. ; Rozeau, O. ; Bogumilowicz, Y. ; Hartmann, J. -M ; Brévard, L. ; Toffoli, A. ; Lafond, D. ; Dansas, H. ; Ghyselen, B. ; Fournel, F. ; Ghibaudo, G. ; Deleonibus, S.
Author_Institution :
CEA/LETI, Grenoble, France
Abstract :
Partially depleted floating body transistors on SGOI down to 30nm gate length were fabricated and characterized. They demonstrate excellent static and RF performances. In particular, SGOI 40nm transistors exhibit at VD=1V a 840μA/μm ION at 0.8V gate voltage overdrive (VGT) vs. 20μA/μm IOFF at VGT = -0.2V and a maximum oscillation frequency (fmax) estimated to be 150 GHz at VG=0.4V. The SGOI originality concerning the floating body effects and the short channel transport were studied in-depth to evaluate this architecture potentiality.
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; nanotechnology; semiconductor materials; semiconductor-insulator boundaries; -0.2 V; 0.4 V; 0.8 V; 1 V; 40 nm; SiGe; floating body effects; floating body transistors; partially depleted transistors; short channel transport; strained SGOI nMOSFET; Frequency estimation; Immune system; Implants; Insulation; MOSFETs; Radio frequency; Silicon on insulator technology; Substrates; Thermal conductivity; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546644
