In-depth study of strained SGOI nMOSFETs down to 30nm gate length

Author

Andrieu, F. ; Ernst, T. ; Faynot, O. ; Rozeau, O. ; Bogumilowicz, Y. ; Hartmann, J. -M ; Brévard, L. ; Toffoli, A. ; Lafond, D. ; Dansas, H. ; Ghyselen, B. ; Fournel, F. ; Ghibaudo, G. ; Deleonibus, S.

Author_Institution

CEA/LETI, Grenoble, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

297

Lastpage

300

Abstract

Partially depleted floating body transistors on SGOI down to 30nm gate length were fabricated and characterized. They demonstrate excellent static and RF performances. In particular, SGOI 40nm transistors exhibit at V_D=1V a 840μA/μm I_ON at 0.8V gate voltage overdrive (V_GT) vs. 20μA/μm I_OFF at V_GT = -0.2V and a maximum oscillation frequency (f_max) estimated to be 150 GHz at V_G=0.4V. The SGOI originality concerning the floating body effects and the short channel transport were studied in-depth to evaluate this architecture potentiality.

Keywords

Ge-Si alloys; MOSFET; carrier mobility; nanotechnology; semiconductor materials; semiconductor-insulator boundaries; -0.2 V; 0.4 V; 0.8 V; 1 V; 40 nm; SiGe; floating body effects; floating body transistors; partially depleted transistors; short channel transport; strained SGOI nMOSFET; Frequency estimation; Immune system; Implants; Insulation; MOSFETs; Radio frequency; Silicon on insulator technology; Substrates; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546644

Filename

1546644