Title :
On the scalability of source/drain current enhancement in thin film sSOI
Author :
Augendre, E. ; Eneman, G. ; De Keersgieter, A. ; Simons, V. ; De Wolf, I. ; Ramos, J. ; Brus, S. ; Pawlak, B. ; Seven, S. ; Leys, F. ; Sleeckx, E. ; Locorotondo, S. ; Ercken, M. ; de Marneffe, J.-F. ; Fei, L. ; Seacrist, M. ; Kellerman, B. ; Goodwin, M. ;
Author_Institution :
Interuniv. Microelectron. Center, IMEC, Leuven, Belgium
Abstract :
This paper demonstrates for the first time the scalability of source/drain current enhancement on low-doped thin film strained silicon on insulator (sSOI) substrate. Current improvement is maintained in narrow channel NFETs despite the relaxation from biaxial to uniaxial tensile strain after mesa patterning. Using strained contact etch-stop layers (sCESL), additional boost is achieved in short devices, resulting in 50% improvement in the drive current of 50 nm gate length devices with respect to conventional reference SOI process.
Keywords :
field effect transistors; semiconductor thin films; silicon-on-insulator; stress effects; thin film transistors; 50 nm; NFET device; biaxial tensile strain; drive current improvement; mesa patterning; source-drain current enhancement; strained contact etch-stop layers; strained silicon on insulator; thin film sSOI substrate; uniaxial tensile strain; Capacitive sensors; Dielectric thin films; Scalability; Semiconductor thin films; Strain measurement; Substrates; Tensile strain; Thin film devices; Transistors; Uniaxial strain;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546645
