High work-function metal gate and high-k dielectrics for charge trap flash memory device applications

Author

Jeon, Sanghun ; Han, Jeong Hee ; Lee, Junghoon ; Choi, Cheol Jong ; Choi, Sangmoo ; Hwang, Hyunsang ; Kim, Chungwoo

Author_Institution

Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

325

Lastpage

328

Abstract

We report the impact of high work-function (Φ_M) metal gate and high-K dielectrics on memory properties of NAND type charge trap flash (CTF) memory devices. In this article, theoretical and experimental studies show that high Φ_M gate and high permittivity (high-K) dielectrics play a key role in eliminating electron back tunneling (EBT) through the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed.

Keywords

flash memories; high-k dielectric thin films; tunnelling; work function; blocking dielectric; charge trap flash memory device; electron back tunneling; erase efficiency; high-k dielectrics; memory properties; work function; CMOS technology; Charge carrier processes; Dielectric devices; Electron traps; Flash memory; High-K gate dielectrics; Ionization; Materials science and technology; Permittivity; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546651

Filename

1546651