Process integration for thin film passive components

Processes for producing tantalum pentoxide thin film capacitors and tantalum nitride thin film resistors in a combined process flow with multi-level interconnects are demonstrated, as may be applied to wafer level packages or thin film modules. Considerations of materials property and component parameter relations are presented in order to fabricate stable, high tolerance devices. Process capability indices are discussed, based on process measurements and statistical analyses of electrical test results over of a wide range of resistor values. Experimental results are compared to calculations of achievable resistor tolerance distributions taking account of both process losses and particulate contamination. It is shown that a capability model based on fixed etching variations combined with a negative binomial distribution of particulate defects may reproduce the experimental observations and assist in formulating design guidelines.