Novel transport mechanism of SiGe dot MOS tunneling diodes

Author

Kuo, P.-S. ; Lin, C.-H. ; Peng, C.-Y. ; Fu, Y.-C. ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

1309

Lastpage

1312

Abstract

The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.

Keywords

Ge-Si alloys; MIS devices; aluminium; electrodes; platinum; semiconductor quantum dots; tunnel diodes; tunnelling; valence bands; Al; Pt; Pt gate electrode; SiGe; hole transport current; metal-oxide-semiconductor tunneling diodes; quantum dot MOS tunneling diodes; transport mechanism; valence band; Electrodes; Elementary particle vacuum; Germanium silicon alloys; Light emitting diodes; Photodetectors; Quantum dots; Semiconductor diodes; Silicon germanium; Spectroscopy; Tunneling; MOS; Pt; SiGe quantum dots; transport mechanism;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601423

Filename

4601423