Title :
Simulation of combined sources of intrinsic parameter fluctuations in a ´real´ 35 nm MOSFET
Author :
Roy, Gareth ; Adamu-Lema, Fikru ; Brown, Andrew R. ; Roy, Scott ; Asenov, Asen
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
A systematic simulation study of intrinsic parameter fluctuations within a real 35 nm MOSFET is presented. The simulations are calibrated against experimental data and a systematic analysis of the effects of discrete random dopants, line edge roughness and oxide thickness fluctuation on device behavior is performed. The combined effects of pairs of fluctuation sources are also studied showing the statistical independence of these sources.
Keywords :
MOSFET; doping profiles; semiconductor device models; 35 nm; MOSFET; device behavior; discrete random dopants; intrinsic parameter fluctuations; line edge roughness; oxide thickness fluctuation; systematic simulation; Analytical models; Atomic measurements; Doping profiles; Electrons; Fluctuations; MOSFET circuits; Mass production; Performance analysis; Silicon; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546654
