DocumentCode
2608467
Title
Simulation of combined sources of intrinsic parameter fluctuations in a ´real´ 35 nm MOSFET
Author
Roy, Gareth ; Adamu-Lema, Fikru ; Brown, Andrew R. ; Roy, Scott ; Asenov, Asen
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
337
Lastpage
340
Abstract
A systematic simulation study of intrinsic parameter fluctuations within a real 35 nm MOSFET is presented. The simulations are calibrated against experimental data and a systematic analysis of the effects of discrete random dopants, line edge roughness and oxide thickness fluctuation on device behavior is performed. The combined effects of pairs of fluctuation sources are also studied showing the statistical independence of these sources.
Keywords
MOSFET; doping profiles; semiconductor device models; 35 nm; MOSFET; device behavior; discrete random dopants; intrinsic parameter fluctuations; line edge roughness; oxide thickness fluctuation; systematic simulation; Analytical models; Atomic measurements; Doping profiles; Electrons; Fluctuations; MOSFET circuits; Mass production; Performance analysis; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546654
Filename
1546654
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