Fully tunable GaAs MESFET OTA-C integrator suitable for high-precision continuous-time filtering

Author

Visocchi, Pask ; Taylor, John ; Betts, Andrew ; Haigh, David

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1993

fDate

3-6 May 1993

Firstpage

1274

Abstract

Measured results for a novel operational transconductance amplifier (OTA)-C integrator realized in 0.5-μm, -1-V threshold GaAs MESFET technology are presented. A wide tuning range and high levels of DC gain are achieved using a single geometry device (20 μm), and without reliance on early saturation. Total harmonic distortion (THD) level are quite modest and show good agreement with SPICE simulations

Keywords

III-V semiconductors; MESFET integrated circuits; analogue processing circuits; circuit tuning; continuous time filters; field effect analogue integrated circuits; frequency response; gallium arsenide; harmonic distortion; integrating circuits; operational amplifiers; -1 V; 0.5 micron; DC gain; GaAs; MESFET technology; OTA-C integrator; SPICE simulations; THD level; active filters; active networks; continuous-time filtering; high-precision; operational transconductance amplifier; total harmonic distortion; wide tuning range; Band pass filters; Bandwidth; Delay; Filtering; Frequency; Gallium arsenide; Geometry; MESFETs; Transconductance; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-1281-3

Type

conf

DOI

10.1109/ISCAS.1993.393962

Filename

393962