• DocumentCode
    2608485
  • Title

    Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown

  • Author

    Crook, Dwight L.

  • Author_Institution
    Intel Corporation, 3585 S. W. 198th Avenue, Aloha, Oregon 97005
  • fYear
    1979
  • fDate
    28946
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.
  • Keywords
    Acceleration; Capacitors; Density functional theory; Dielectric breakdown; Dielectric devices; Equations; Large scale integration; Temperature; Thermal factors; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1979. 17th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1979.362863
  • Filename
    4208256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2608485