DocumentCode
2608494
Title
Assessment of MESFET models for nonlinear microwave circuit design
Author
Rodriguez-Tellez, J. ; Al-Daas, M. ; Mezher, K.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Bradford Univ., UK
fYear
1993
fDate
3-6 May 1993
Firstpage
1278
Abstract
The Curtice quadratic, Materka, Statz and Rodriguez nonlinear models are compared from DC, constant voltage (CV) and RF points of view in order to determine which is most suitable for nonlinear wideband circuit design. For this comparison, a variety of different size GaAs MESFET devices is employed. Data for a 25-μm and 900-μm gate-width device with a pinch-off voltage of -2V and a gate-length of 0.5-μm are extensively used for the model comparison work
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave circuits; microwave field effect transistors; nonlinear network synthesis; semiconductor device models; -2 V; 0.5 micron; 25 micron; 900 micron; AC model equations; DC model equations; GaAs; MESFET models; nonlinear microwave circuit design; nonlinear models; wideband circuit design; Capacitance; Capacitors; Circuit synthesis; Equations; MESFET circuits; Predictive models; Resistors; Topology; Voltage; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-1281-3
Type
conf
DOI
10.1109/ISCAS.1993.393963
Filename
393963
Link To Document