Phase modulator based on silicon-on-insulator (SOI) rib waveguide

Author

Mardiana, B. ; Hazura, H. ; Hanim, A.R. ; Shaari, Sahbudin ; Abdullah, Huda

Author_Institution

Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia

fYear

2010

fDate

5-7 July 2010

Firstpage

1

Lastpage

3

Abstract

This paper presents the study of electrical characteristic of phase modulator in the carrier injection mode. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. In summary, the phase modulator device required 0.035mA drive current to get π phase shift at wavelength 1.55μm meanwhile 0.066mA drive current is required for the 1.3μm wavelength.

Keywords

integrated optics; optical modulation; optical phase shifters; optical waveguides; p-i-n diodes; phase modulation; rib waveguides; silicon-on-insulator; SILVACO software; SOI; Si; carrier injection mode; current 0.066 mA; drive current; electrical device performance; electrical properties; p-i-n diode structure; phase modulator; phase shift; silicon-on-insulator rib waveguide; wavelength 1.55 mum; Optical modulation; Optical variables control; Optical waveguides; Phase modulation; Refractive index; Silicon; Phase modulator; Silicon-on-Insulator; carrier injection; refractive index change;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2010 International Conference on

Conference_Location

Langkawi, Kedah

Print_ISBN

978-1-4244-7186-7

Type

conf

DOI

10.1109/ICP.2010.5604385

Filename

5604385