DocumentCode :
2608577
Title :
Phase modulator based on silicon-on-insulator (SOI) rib waveguide
Author :
Mardiana, B. ; Hazura, H. ; Hanim, A.R. ; Shaari, Sahbudin ; Abdullah, Huda
Author_Institution :
Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia
fYear :
2010
fDate :
5-7 July 2010
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents the study of electrical characteristic of phase modulator in the carrier injection mode. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. In summary, the phase modulator device required 0.035mA drive current to get π phase shift at wavelength 1.55μm meanwhile 0.066mA drive current is required for the 1.3μm wavelength.
Keywords :
integrated optics; optical modulation; optical phase shifters; optical waveguides; p-i-n diodes; phase modulation; rib waveguides; silicon-on-insulator; SILVACO software; SOI; Si; carrier injection mode; current 0.066 mA; drive current; electrical device performance; electrical properties; p-i-n diode structure; phase modulator; phase shift; silicon-on-insulator rib waveguide; wavelength 1.55 mum; Optical modulation; Optical variables control; Optical waveguides; Phase modulation; Refractive index; Silicon; Phase modulator; Silicon-on-Insulator; carrier injection; refractive index change;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics (ICP), 2010 International Conference on
Conference_Location :
Langkawi, Kedah
Print_ISBN :
978-1-4244-7186-7
Type :
conf
DOI :
10.1109/ICP.2010.5604385
Filename :
5604385
Link To Document :
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