DocumentCode
2608599
Title
Certain Failure Mechanisms in Two-Level Poly-Si Gate Structures - A Transmission Electron Microscopy Study
Author
Sinha, A.K. ; Sheng, T.T. ; Shankoff, T.A. ; Lindenberger, W.S. ; Fuls, E.N. ; Chang, C.C.
Author_Institution
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
fYear
1979
fDate
28946
Firstpage
35
Lastpage
38
Abstract
In order to reveal lower-than-normal voltage oxide breakdown mechanisms in two-level overlapping poly-Si gate structures, we have examined high resolution cross-sections in the transmission electron microscope. It is shown that the gate oxide undercut of polyI prior to the reoxidation step can lead to a significant localized thinning and/or trapped voids in the regrown oxide.
Keywords
Breakdown voltage; Charge carrier processes; Diffraction; Electric breakdown; Electron traps; Failure analysis; Optical microscopy; Periodic structures; Scanning electron microscopy; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1979.362868
Filename
4208261
Link To Document