DocumentCode :
2608682
Title :
Electromigration of Sputtered Al-Si Alloy Films
Author :
Nagasawa, Eiji ; Okabayashi, Hidekazu ; Nozaki, Tadatoshi ; Nikawa, Kiyoshi
Author_Institution :
Nippon Electric Co., Ltd., 1-1, Miyazaki, Yonchome Takatsu-Ku, Kawasaki-Shi Kanagawa-Ken, 213, JAPAN
fYear :
1979
fDate :
28946
Firstpage :
64
Lastpage :
71
Abstract :
Electromigration experiments were conducted on sputtered Al-Si alloy films of different metallographical properties, particularly, various grain sizes. The observed failure mode and median time to failure were found to be strongly dependent on grain size and its homogeneity in the films. Results were obtained on temperature dependence of median time to failure and of the failure mode in fine grained films. These failure mode differences were found to be related to void growth directions in conductor stripe, which were dependent on test conditions.
Keywords :
Cobalt alloys; Conductive films; Conductors; Current density; Electromigration; Grain size; Semiconductor films; Temperature dependence; Testing; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1979.362872
Filename :
4208265
Link To Document :
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