DocumentCode
2608776
Title
On double surface conduction in SOI MOSFETs
Author
Whitfield, J.
Author_Institution
Motorola Inc., Mesa, AZ, USA
fYear
1989
fDate
3-5 Oct 1989
Firstpage
46
Lastpage
47
Abstract
Summary form only given. The double interface conduction operation of SOI MOSFETs is studied and a closed-form solution for long channel operation is obtained. The total device currents are solved for two cases: when the front interface mobility is equal to the back mobility, and when the back mobility is much smaller than the front mobility. The derivation and implications of these currents are discussed. Hot-carrier generation during the back interface depletion condition is also discussed
Keywords
carrier mobility; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface conductivity; SOI MOSFETs; back interface depletion condition; back mobility; closed-form solution; double surface conduction; front interface mobility; hot carrier generation; long channel operation; model; total device currents; Body regions; Boundary conditions; Closed-form solution; Dielectrics; Equations; Hot carriers; Insulation; Isolation technology; Lead compounds; MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location
Stateline, NV
Type
conf
DOI
10.1109/SOI.1989.69758
Filename
69758
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