Title :
On double surface conduction in SOI MOSFETs
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Abstract :
Summary form only given. The double interface conduction operation of SOI MOSFETs is studied and a closed-form solution for long channel operation is obtained. The total device currents are solved for two cases: when the front interface mobility is equal to the back mobility, and when the back mobility is much smaller than the front mobility. The derivation and implications of these currents are discussed. Hot-carrier generation during the back interface depletion condition is also discussed
Keywords :
carrier mobility; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface conductivity; SOI MOSFETs; back interface depletion condition; back mobility; closed-form solution; double surface conduction; front interface mobility; hot carrier generation; long channel operation; model; total device currents; Body regions; Boundary conditions; Closed-form solution; Dielectrics; Equations; Hot carriers; Insulation; Isolation technology; Lead compounds; MOSFETs;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69758
