DocumentCode
2608807
Title
New perspectives on NBTI in advanced technologies: modelling & characterization
Author
Denais, Mickael ; Huard, Vincent ; Parthasarathy, Chittoor ; Ribes, Guillaume ; Perrier, Franck ; Roy, David ; Bravaix, Alain
Author_Institution
STMicroelectronics, Crolles, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
399
Lastpage
402
Abstract
This work presents new perspectives of the NBTI in advanced technology. Both modelling and characterization of NBTI are investigated for the maturation of the reliability management in advanced node technologies. A physical-based VT instability model is presented considering interface trapped charges, fixed charges and oxide trapped holes effects. Finally, we discuss on the lifetime concept in the case of recoverable NBTI-induced degradation.
Keywords
MOSFET; interface states; semiconductor device breakdown; semiconductor device reliability; NBTI; VT instability model; fixed charges effects; interface trapped charges; oxide trapped holes effects; reliability management; Annealing; CMOS technology; Degradation; Diffusion bonding; Hydrogen; Niobium compounds; Semiconductor device modeling; Stress; Technology management; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546669
Filename
1546669
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