Title :
Ionic Contamination-Humidity Effects on GaAs FETs
Author :
Anderson, W.T., Jr. ; Christou, A. ; Sleger, K.J.
Author_Institution :
Naval Research Laboratory, Washington, D. C. 20375
Abstract :
A study was made to determine the susceptibility to failure of present commercially available GaAs FETs as a result of the concurrent exposure to temperature cycling, high relative humidity, and ionic contamination. Devices with Al and Au/refractory gates from four different suppliers were studied. Devices with Au/refractory gates were less susceptible to degradation as a result of the hostile environment. Failure mechanisms were determined and correlated with the electrical degradation of the devices.
Keywords :
Contamination; Corrosion; Degradation; FETs; Gallium arsenide; Gold; Humidity; Moisture; Passivation; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1979.362881
