DocumentCode :
2608889
Title :
On the Reliability of Power GaAs FETs
Author :
Drukier, Ira ; Silcox, John F., Jr.
Author_Institution :
Microwave Semiconductor Corporation, Somerset, New Jersey 08873
fYear :
1979
fDate :
28946
Firstpage :
150
Lastpage :
155
Abstract :
Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At operating temperatures of 125°C a MTTF of mid 106 hours is predicted. The activation energy of this process is 1.85ev with ¿n = 0.7. Failures are related to electromigration in the gate fingers.
Keywords :
Bonding; FETs; Fabrication; Gallium arsenide; Intrusion detection; Life testing; Microwave devices; Production; Semiconductor device reliability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1979.362885
Filename :
4208278
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2608889
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