DocumentCode :
2608908
Title :
Reliability of Gold Metallized Commercially Available Power GaAs FETs
Author :
Cohen, Eliot D. ; Macpherson, Alan C.
Author_Institution :
Naval Research Laboratory, Washington, D.C. 20375
fYear :
1979
fDate :
28946
Firstpage :
156
Lastpage :
160
Abstract :
Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.
Keywords :
Aluminum; Capacitance-voltage characteristics; FETs; Gallium arsenide; Gold; Life estimation; Metallization; Temperature; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1979.362886
Filename :
4208279
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2608908
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