DocumentCode
2609006
Title
Scanning Infrared Microscopy Techniques for Semiconductor Thermal Analysis
Author
Lidback, C. A Cal
Author_Institution
MOTOROLA INC., Integrated Circuits Division, P. O. Box 20906, Phoenix, AZ 85036
fYear
1979
fDate
28946
Firstpage
183
Lastpage
189
Abstract
Because failure rates of component piece parts, particularly integrated circuits, increase as the ambient temperature increases, the component designer is committed to design his product to meet the input and output requirements with minimum thermal dissipation. Quantitative and qualitative thermal distribution information available through scanning infrared microscopy can support his objective. The failure analyst is directed to subtle failure sites which are made evident by abnormal thermal distributions. Thermal resistance studies involving a variety of normal production materials and processes are possible. Thermal resistance has been shown to be a variable dependent upon die area. Thermal resistance also varies depending upon a multitude of component manufacturing variables. The data is most meaningful when measured using standard product drawn from shippable lots, which is easily accomplished using a scanning infrared microscope. The scanning infrared microscope has been found to be an effective tool for solving. thermal management problems in semiconductor components. The techniques described here can be modified and extended to meet the thermal management challenges in all sectors of the electronics industry.
Keywords
Electrical resistance measurement; Failure analysis; Microscopy; Product design; Production materials; Semiconductor device manufacture; Temperature; Thermal management; Thermal management of electronics; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1979.362891
Filename
4208284
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