Title :
Insight on physics of Hf-based dielectrics reliability
Author :
Ribes, G. ; Denais, M. ; Bruyere, S. ; Roy, D. ; Monsieur, F. ; Huard, V. ; Parthasarthy, C. ; Muller, M. ; Skotnicki, T. ; Ghibaudo, G.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
In this work, we propose an analysis of trapping mechanism and we try to find the possible origins of the traps acting in the BTI stress. In a second section, we present a statistical and degradation analysis of breakdown for substrate and gate injections.
Keywords :
MOSFET; dielectric materials; electron traps; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; BTI stress; degradation analysis; dielectrics reliability; gate injections breakdown; statistical analysis; substrate breakdown; trapping mechanism; Degradation; Dielectric substrates; Electron traps; High-K gate dielectrics; MOS devices; Niobium compounds; Physics; Stress; Temperature; Titanium compounds;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546678
