Performance characterization of MOS turn off thyristors

Author

Gutierrez, Monica ; Venkateramanan, G. ; Moreira, Alessandro ; Sundaram, Ashok

Author_Institution

Underwriters Lab., Camas, WA, USA

Volume

5

fYear

2000

fDate

2000

Firstpage

2853

Abstract

Recently, power semiconductor devices that combine the technology of MOS turn-off and bipolar conduction have been introduced for operation at high voltage and current levels. The MOS turn off thyristor (MTO^TM) is a switching device based on the gate turn off thyristor. This paper is devoted to presenting the results from a study performed to examine the operating characteristics of the MTO^TM. The study included experimental measurements of on-state properties and switching characteristics under snubberless hard switching. Turn off loss, device switching delay time, storage time, transition time and on-state losses are characterized. In addition to the experimental results, the paper also presents a brief review of operation of the device and the experimental procedure used in the study

Keywords

MOS-controlled thyristors; loss measurement; power semiconductor switches; semiconductor device measurement; semiconductor device testing; MOS turn off thyristors; bipolar conduction; device switching delay time; gate turn off thyristor; on-state losses; on-state properties; operating characteristics; performance characterization; power semiconductor devices; snubberless hard switching; storage time; switching characteristics; transition time; turn off loss; Circuits; Delay; Insulated gate bipolar transistors; Laboratories; Lakes; Low voltage; Power semiconductor devices; Power semiconductor switches; Semiconductor device packaging; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882570

Filename

882570