Title :
A reliable wire bonding on 130nm Cu/low-k device
Author :
Gu, X. ; Antol, Joze ; Yao, Y.F. ; Chua, K.H.
Author_Institution :
Agere Syst. Singapore Pte Ltd., Singapore
Abstract :
New circuits made of Cu traces and low-k dielectrics bring new challenges such as pad peeling during the wire bonding process. The wire bonding process characterization requires special attention compared to those conventionally made with Al and FSG. Failures encountered in the very first trial were found to be due to open circuits and serious pad peeling. Bond lift during the tweezers pull test, found in further studies, also raises potential concern of long term thermal stability. A focused ion beam (FIB) was used to analysis the peeling defect, design of experiment (DOE) isolated the critical process variables, high temperature storage (HTS) verified the long term thermal stability to ensure the success of the world´s first production-qualified low-k dielectric device with 130 nm Cu technology.
Keywords :
copper; design of experiments; dielectric thin films; focused ion beam technology; integrated circuit bonding; integrated circuit interconnections; integrated circuit reliability; lead bonding; thermal stability; thermal stresses; 130 nm; Cu; Cu traces; DOE; FIB; HTS; bond lift; design of experiment; focused ion beam; high temperature storage; long term thermal stability; low-k dielectrics; open circuits; pad peeling; tweezers pull test; wire bonding reliability; Bonding processes; Circuit stability; Circuit testing; Dielectrics; High temperature superconductors; Ion beams; Stability analysis; Thermal stability; US Department of Energy; Wire;
Conference_Titel :
Electronics Packaging Technology, 2003 5th Conference (EPTC 2003)
Print_ISBN :
0-7803-8205-6
DOI :
10.1109/EPTC.2003.1271610
