Title :
Scalability of strained nitride capping layers for future CMOS generations
Author :
Eneman, G. ; Jurczak, M. ; Verheyen, P. ; Hoffmann, T. ; De Keersgieter, A. ; De Meyer, K.
Author_Institution :
IMEC, Heverlee, Belgium
Abstract :
This paper investigates the layout dependence of strain induced in transistor channels, for technologies that use strained nitride capping layers (or contact etch stop layers - CESL). It is shown that the sensitivity in dense structures will be reduced for thinner nitride capping layers and scaled spacers. In isolated structures, the effects of STI- and CESL-induced stress are additive. Guidelines for CESL-scaling in future technologies are proposed.
Keywords :
CMOS integrated circuits; etching; isolation technology; CMOS; contact etch stop layers; strained nitride capping layers; transistor channels; Capacitive sensors; Compressive stress; Electronic switching systems; Etching; Guidelines; Isolation technology; MOSFETs; Scalability; Space technology; Tensile stress;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546681
