A new validated physically based IGCT model for circuit simulation of snubberless and series operation

Author

Kuhn, H. ; Schrbder, D.

Author_Institution

Inst. of Electr. Drives, Tech. Univ. Munchen, Germany

Volume

5

fYear

2000

fDate

2000

Firstpage

2866

Abstract

A new physically based model which is implemented in Saber MAST(R) and usable for circuit simulation in order to calculate the static and dynamic behaviour of IGCT devices correctly is presented in this paper. The model is verified by comparing simulation with experimental results of a 4.5 kV/3 kA-IGCT in hard switch snubberless operation. Furthermore simulation results of two series connected IGCT switches are analyzed especially concerning the problem of nonsymmetrically distributed blocking voltages between the switches if snubbers are omitted due to inevitably existent differences concerning the exact device properties and the gate drives respectively. An idea for dimensioning the snubber capacity is given

Keywords

circuit simulation; power semiconductor switches; semiconductor device models; thyristors; 4.5 kV; IGCT switches; Saber MAST(R); circuit simulation; dynamic behaviour; integrated gate commutated thyristors; nonsymmetrically distributed blocking voltages; physically based IGCT model; series operation; snubber capacity dimensioning; snubberless operation; static behaviour; Anodes; Buffer layers; Cathodes; Circuit simulation; Physics; Scattering; Snubbers; Switches; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882572

Filename

882572