DocumentCode
2609132
Title
Instability and Failure Mechanisms of Small Area, Nitride-Defined Schottky Barrier Diodes, in LSI Applications
Author
Kim, S.U.
Author_Institution
IBM General Technology Division, Essex Junction, Vermont 05452
fYear
1979
fDate
28946
Firstpage
226
Lastpage
233
Keywords
Equations; Etching; Failure analysis; Integrated circuit technology; Large scale integration; Leakage current; Schottky barriers; Schottky diodes; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1979.362898
Filename
4208291
Link To Document