DocumentCode
2609149
Title
Ion Implanted P-Resistor Reliability
Author
Chaudhari, P.K. ; Nelson, G.R. ; Nagarajan, A.
Author_Institution
International Business Machines Corporation, F83/052, P.O. Box 390, Poughkeepsie, New York 12602. (914) 463-5061
fYear
1979
fDate
28946
Firstpage
234
Lastpage
237
Abstract
One of the key aspects of large scale integration in bipolar technology depends on the use of high valued resistors. Ion implantation can lead to higher valued resistors not possible with diffused technology. Two different process technologies, pre-emitter and post-emitter, for making ion implanted resistors I2R are described. Also described are measured profiles, reliability studies carried out on p-resistors made by the two technologies, a model describing the resistor drift, and the effect of annealing.
Keywords
Annealing; Capacitance; Implants; Insulation life; Ion implantation; Large scale integration; Resistors; Stability; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1979.362899
Filename
4208292
Link To Document