Title :
Ion Implanted P-Resistor Reliability
Author :
Chaudhari, P.K. ; Nelson, G.R. ; Nagarajan, A.
Author_Institution :
International Business Machines Corporation, F83/052, P.O. Box 390, Poughkeepsie, New York 12602. (914) 463-5061
Abstract :
One of the key aspects of large scale integration in bipolar technology depends on the use of high valued resistors. Ion implantation can lead to higher valued resistors not possible with diffused technology. Two different process technologies, pre-emitter and post-emitter, for making ion implanted resistors I2R are described. Also described are measured profiles, reliability studies carried out on p-resistors made by the two technologies, a model describing the resistor drift, and the effect of annealing.
Keywords :
Annealing; Capacitance; Implants; Insulation life; Ion implantation; Large scale integration; Resistors; Stability; Temperature; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1979.362899
