Title :
Recent advances in high efficiency GaInP2/GaAs tandem solar cells
Author :
Olson, J. ; Kurtz, Sarah ; Kibbler, A. ; Faine, P.
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
A two-terminal, monolithic, tunnel-junction-interconnected GaInP 2/GaAs cascade solar cell is reported with AM 1.5, global, total- and active-area efficiencies of 27.3% and 28.7%, respectively. Part of the success with this device is attributed to the electronic quality of GaInP2, the development of optically thin GaInP 2 top cells for current matching, and an extensive modeling effort. Recent advances in the growth, fabrication, and characterization of GaInP2/GaAs devices are presented. Issues related to efficiency, spectral sensitivity, material quality, and device modeling are discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; semiconductor device manufacture; solar cells; 27.3 percent; 28.7 percent; GaInP-GaAs; cascade; characterization; current matching; efficiency; electronic quality; fabrication; growth; modeling; monolithic; optically thin; semiconductors; spectral sensitivity; tandem solar cells; Coatings; Diodes; Gallium arsenide; Gases; Gold; Lithography; MOCVD; Optical devices; Photonic band gap; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111585
