Performance characterization of 1-kA/4.5-kV symmetrical emitter turn-off thyristor (ETO)

Author

Xu, Zhenxue ; Li, Yuxin ; Huang, Alex Q.

Author_Institution

Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

5

fYear

2000

fDate

2000

Firstpage

2880

Abstract

The emitter turn-off thyristor (ETO) is a hybrid power semiconductor device that turns off the gate turn-off thyristor (GTO) under the unity turn-off gain condition. This paper presents, for the first time, test results of a symmetrical ETO. The on-state voltage drops, snubberless forced turn-off losses, and load-commutated turn-off losses are characterized. The results show that the symmetrical ETO is suitable for applications that need high current and high reverse voltage blocking capability, such as a current source inverter (CSI)

Keywords

losses; power semiconductor switches; semiconductor device measurement; semiconductor device testing; thyristors; 1 kA; 4.5 kV; ETO; applications; current source; device characterisation; high current capability; high reverse voltage blocking capability; hybrid power semiconductor device; load-commutated turn-off losses; on-state voltage drops; snubberless forced turn-off losses; symmetrical emitter turn-off thyristor; unity turn-off gain condition; Insulated gate bipolar transistors; Power electronics; Power quality; Power semiconductor devices; Pulse width modulation inverters; Snubbers; Switches; Testing; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882574

Filename

882574