Title :
The new IGBT generation a great improvement potential for motor drive systems
Author :
Laska, T. ; Lorenz, L. ; Mauder, A.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A new IGBT module generation with a so called field stop IGBT in combination with a new freewheeling diode, based on the same principle of a vertical shrink by means of ultrathin wafer technology, is discussed. The results are very robust devices with almost ideal carrier concentrations for minimum on state voltages and switching losses
Keywords :
carrier density; insulated gate bipolar transistors; motor drives; power bipolar transistors; power semiconductor diodes; IGBT module generation; carrier concentration; field stop IGBT; freewheeling diode; minimum on state voltages; motor drive systems; switching losses; ultrathin wafer technology; vertical shrink; Automatic control; Control systems; Frequency; Insulated gate bipolar transistors; Motor drives; Power electronics; Semiconductor diodes; Switches; Switching loss; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882575
