DocumentCode
2609197
Title
The new IGBT generation a great improvement potential for motor drive systems
Author
Laska, T. ; Lorenz, L. ; Mauder, A.
Author_Institution
Infineon Technol., Munich, Germany
Volume
5
fYear
2000
fDate
2000
Firstpage
2885
Abstract
A new IGBT module generation with a so called field stop IGBT in combination with a new freewheeling diode, based on the same principle of a vertical shrink by means of ultrathin wafer technology, is discussed. The results are very robust devices with almost ideal carrier concentrations for minimum on state voltages and switching losses
Keywords
carrier density; insulated gate bipolar transistors; motor drives; power bipolar transistors; power semiconductor diodes; IGBT module generation; carrier concentration; field stop IGBT; freewheeling diode; minimum on state voltages; motor drive systems; switching losses; ultrathin wafer technology; vertical shrink; Automatic control; Control systems; Frequency; Insulated gate bipolar transistors; Motor drives; Power electronics; Semiconductor diodes; Switches; Switching loss; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location
Rome
ISSN
0197-2618
Print_ISBN
0-7803-6401-5
Type
conf
DOI
10.1109/IAS.2000.882575
Filename
882575
Link To Document