Monolithic bidirectional switch (MBS) - a novel MOS-based power device

Author

Baus, Matthias ; Ali, Md Zahid ; Winkler, Olaf ; Spangenberg, Bernd ; Lemme, Max C. ; Kurz, Heinrich

Author_Institution

Inst. fur Halbleitertechnik, RWTH Aachen Univ., Germany

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

473

Lastpage

476

Abstract

A novel MOS-based power device, the monolithic bidirectional switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.

Keywords

MIS devices; Schottky barriers; elemental semiconductors; oxidation; power semiconductor switches; silicon; LOCOS; MOS power device; Schottky contacts; Si; device parasitics; monolithic bidirectional switch; oxidation; self-aligned fabrication process; Analytical models; Charge carrier processes; Conductivity; Insulated gate bipolar transistors; Matrix converters; Plasma measurements; Schottky diodes; Silicon; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546687

Filename

1546687