Title :
Monolithic bidirectional switch (MBS) - a novel MOS-based power device
Author :
Baus, Matthias ; Ali, Md Zahid ; Winkler, Olaf ; Spangenberg, Bernd ; Lemme, Max C. ; Kurz, Heinrich
Author_Institution :
Inst. fur Halbleitertechnik, RWTH Aachen Univ., Germany
Abstract :
A novel MOS-based power device, the monolithic bidirectional switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.
Keywords :
MIS devices; Schottky barriers; elemental semiconductors; oxidation; power semiconductor switches; silicon; LOCOS; MOS power device; Schottky contacts; Si; device parasitics; monolithic bidirectional switch; oxidation; self-aligned fabrication process; Analytical models; Charge carrier processes; Conductivity; Insulated gate bipolar transistors; Matrix converters; Plasma measurements; Schottky diodes; Silicon; Switches; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546687
