An investigation of turn-off performance of planar and trench gate IGBTs under soft and hard switching

Author

Iwamoto, Hideo ; Kondo, Hisao ; Mori, Satoshi ; Donlon, J.E. ; Kawakami, Akira

Author_Institution

Div. of Power Device, Mitsubishi Electr. Corp., Fukuoka, Japan

Volume

5

fYear

2000

fDate

2000

Firstpage

2890

Abstract

This paper presents the results of an investigation into the turn-off performance of planar and trench gate IGBTs under conditions of soft and hard switching topologies. Voltage and current waveforms, power losses, electric field distributions, and carrier behaviors inside the chips are studied through simulation and experiment. It is noted that the trench gate IGBT has advantage over the planar gate IGBT for hard switching application. On the other hand, the turn-off loss of the planar gate IGBT under soft switching application is slightly lower than that of the trench gate IGBT

Keywords

electric fields; insulated gate bipolar transistors; isolation technology; losses; power semiconductor switches; switching; carrier behaviors; current waveform; electric field distributions; hard switching; planar gate IGBT; power losses; soft switching; trench gate IGBT; turn-off loss; turn-off performance; voltage waveform; Analytical models; Buffer layers; Circuit simulation; Current density; Electric potential; Insulated gate bipolar transistors; Medical simulation; Semiconductor device measurement; Voltage control; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882576

Filename

882576