Title :
High-efficiency GaAs/CuInSe2 and AlGaAs/CuInSe2 thin-film tandem solar cells
Author :
Gale, R. ; McClelland, R. ; Dingle, B. ; Gormley, J. ; Burgess, R. ; Kim, N. ; Mickelsen, R. ; Stanbery, B.
Author_Institution :
Kopin Corp., Taunton, MA, USA
Abstract :
Tandem cell throughput has been increased, and quantities of cells that produce tens of watts of power in total were fabricated. An improved efficiency of 23.1% AM0/one sun at 28°C has been obtained for 4 cm2 tandem cells. The mechanically stacked tandem cells consist of an n+:AlGaAs/n:GaAs/p:GaAs/p+:A thin-film top cell and an n+:CdZnS/p:CuInSe2 thin-film bottom cell. In addition to being highly efficient, the cells are light in weight and radiation resistant. Large numbers of tandem cells have been completed, and individual cell performances exceeded 20% for the GaAs top cell and 3% for the CuInSe2 (CIS) bottom cell. To attain increased radiation resistance and even higher end-of-life efficiencies, the use of an AlGaAs high-bandgap cell for the upper cell was investigated. Large areas of thin-film AlGaAs were produced using the CLEFT process and filters to simulate AlGaAs cell structures to be used over the CIS cells were fabricated. CIS cells have been tested under these filters. Results of these measurements indicate that significantly higher efficiencies can be expected from the lower cell in this configuration, and very high end-of-life efficiencies are possible with this approach
Keywords :
III-V semiconductors; aluminium compounds; copper compounds; gallium arsenide; solar cells; ternary semiconductors; 23.1 percent; 28 degC; AlGaAs-CuInSe2; CLEFT process; GaAs-CuInSe2; bottom cell; filters; measurements; performances; radiation resistance; tandem solar cells; throughput; top cell; Computational Intelligence Society; Electrons; Extraterrestrial measurements; Gallium arsenide; NASA; Photonic band gap; Photovoltaic cells; Power systems; Transistors; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111590