DocumentCode :
2609288
Title :
Increase of output power from IGBTs in high power high frequency resonant load inverters
Author :
Kleveland, Frode ; Undeland, Tore M. ; Langelid, John K.
Author_Institution :
Fac. of Electr. Eng. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Volume :
5
fYear :
2000
fDate :
2000
Firstpage :
2909
Abstract :
The primary goal of this work is to replace MOSFETs with IGBTs in high frequency (~300 kHz) high power (0.1-1 MW) inverters with series resonant load, a topology commonly used for induction heating. In this application, the IGBT losses are totally dominated by turn-off losses, and the turn-off losses decay less than linearly with the current. This is an invitation to develop a new control strategy which makes the necessary derating of the IGBTs less severe. For the conditions in this work, the new strategy can give 3 times more output power compared to a simple current reduction destressing for the same number of paralleled IGBTs
Keywords :
insulated gate bipolar transistors; invertors; losses; resonant power convertors; 0.1 to 1 MW; 300 kHz; IGBT; IGBT losses; current reduction destressing; high power high frequency resonant load inverters; induction heating; output power; output power increase; series resonant load; turn-off losses; Costs; Diodes; Insulated gate bipolar transistors; Inverters; MOSFETs; Power generation; Resonance; Resonant frequency; Switching frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
ISSN :
0197-2618
Print_ISBN :
0-7803-6401-5
Type :
conf
DOI :
10.1109/IAS.2000.882579
Filename :
882579
Link To Document :
بازگشت